Department of Computer Science and Technology

Technical reports

A compositional model of MOS circuits

Glynn Winskel

April 1987, 25 pages

DOI: 10.48456/tr-105

Abstract

This paper describes a compositional model for MOS circuits. Like the model of Bryant (1984), it covers some of the effects of capacitance and resistance used frequently in designs. Although this has formed the basis of several hardware simulators, it suffers from the inadequacy that it is not compositional, making it difficult to reason in a structured way.

The present paper restricts its attention to the static behaviour of circuits, representing this as the set of possible steady states the circuit can settle into. A good understanding of such static behaviour is necessary to treat sequential circuits. This paper further takes the view that it is useful to have a language to describe the construction of circuits, and to this end borrows ideas from Hoare’s Communicating Sequential Processes, and Milner’s Calculus of Communicating Systems.

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BibTeX record

@TechReport{UCAM-CL-TR-105,
  author =	 {Winskel, Glynn},
  title = 	 {{A compositional model of MOS circuits}},
  year = 	 1987,
  month = 	 apr,
  url = 	 {https://www.cl.cam.ac.uk/techreports/UCAM-CL-TR-105.pdf},
  institution =  {University of Cambridge, Computer Laboratory},
  doi = 	 {10.48456/tr-105},
  number = 	 {UCAM-CL-TR-105}
}